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2n7000 vs. bs170: Differences Between N-Channel Mosfet Transistors

MOSFET transistor N -channel enhancement mode

N-Channel MOSFET enhancement mode 

Transistors are one of the essential devices for electronics. These semiconductors are prolific in both analog and digital circuit designs. Although bipolar junction transistors (BJTs) (the first transistor architectures) and junction field-effect transistors (JFETs) are commonly used, metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most versatile and most implemented. The attributes that make these components preferable for many applications can be seen by looking at the 2N7000 vs. BS170 N-channel MOSFETs.

MOSFET Transistor Applications and Types

Transistors, including MOSFETs, are often used for signal amplification and essential switching operations. Applications where MOSFETs are regularly used include the following.

Typical MOSFET Transistor Applications:

The list above is not exhaustive, but representative of the wide range of applications for MOSFETs. To fulfill these applications, there are various types of MOSFET utilization. Some of these are listed below.

MOSFET Technologies:

In addition to the above, MOSFETs exhibit different performance characteristics dependent upon the class of operation.

MOSFET Classes and Operation

There are four classes of operation for MOSFETs, as shown in the figure below.

MOSFET N and P channel class symbols

As shown above, MOSFETs operate in either enhancement mode, where the channel is dynamically created during operation, or depletion mode, where the channel is preconstructed, devices. Both modes may be constructed using positively (P channel) or negatively charged (N channel) material.

Comparing the 2N7000 vs. BS170 N-Channel MOSFETs

Both the 2N7000 and BS170 are N-channel enhancement MOSFETs and have the following major features:

Features of the 2N7000:
  • High-Density Cell Design for Low RDS(on) 
  • Voltage Controlled Small Signal Switch 
  • Rugged and Reliable 
  • High Saturation Current Capability 
  • Pb (Lead)−Free and Halogen Free

Features of the BS170:

  • High-Density Cell Design for Low RDS(on) 
  • Voltage Controlled Small Signal Switch 
  • Rugged and Reliable 
  • High Saturation Current Capability 
  • Pb (Lead)−Free

In addition to having similar features, these semiconductor components DMOS manufactured and are best suited for small current, lower power applications; such as servo control and switching. These devices can be compared based on their electrical and thermal characteristics, as listed below.

2N7000 vs BS170 Specifications Comparison 

Maximum Ratings

2N7000

BS170

VDSS

60V

60V

VDGR

60V

60V

VGSS

±20V

±20V

ID (continuous)

200mA

500mA

PD

400mW

830mW

Thermal Characteristics

2N7000

BS170

Operating Range

-55°C to 150°C

-55°C to 150°C

Thermal Resistance

312.5°C/W

150°C/W

As indicated in the table, the BS170 has much better resistance to temperature changes and can carry a higher constant current. However, the 2N7000 uses less power. Additional specifications can be found in the 2N7000 and BS170 datasheets.

Creating the Best MOSFET PCBA Design

For the 2N7000 and BS170 MOSFETs, good design practices include following your PCBA contract manufacturer’s (CM’s) DFM, DFA rules, and guidelines should be instituted. However, to ensure the manufacturability and efficiency of your PCBA development process, you must rely upon a trusted industry component library resource for accurate and manufacturer-verified component symbols, footprints, and 3D CAD models for your chosen package type.

Suppose you’re looking for CAD models for common components or part comparisons like 2N7000 vs. BS170 N-channel MOSFETs. In that case, Ultra Librarian helps by compiling all your sourcing and CAD information in one place.

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